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Invention Application
US20110012170A1 SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER 失效
升压DC-DC转换器和升压型DC-DC转换器中使用的半导体器件

  • Patent Title: SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER
  • Patent Title (中): 升压DC-DC转换器和升压型DC-DC转换器中使用的半导体器件
  • Application No.: US12889695
    Application Date: 2010-09-24
  • Publication No.: US20110012170A1
    Publication Date: 2011-01-20
  • Inventor: Masaya Ohtsuka , Yoshinori Ueda
  • Applicant: Masaya Ohtsuka , Yoshinori Ueda
  • Applicant Address: JP Tokyo
  • Assignee: RICOH COMPANY, LTD.
  • Current Assignee: RICOH COMPANY, LTD.
  • Current Assignee Address: JP Tokyo
  • Priority: JP2006-165589 20060615; JP2007-090883 20070330
  • Main IPC: H01L29/74
  • IPC: H01L29/74
SEMICONDUCTOR DEVICE USED IN STEP-UP DC-DC CONVERTER, AND STEP-UP DC-DC CONVERTER
Abstract:
A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency.The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power supply; a voltage step-down unit that steps down an output voltage of the voltage step-up unit; and a load that is driven to operate by an output voltage of the voltage step-down unit. The voltage step-up unit steps up the output voltage of the first power supply to a lower limit of an operating voltage of the voltage step-down unit.
Abstract(Chinese):

公开了能够满足正在使用的设备的功率要求并具有高效率的电源装置。 电源装置包括第一电源; 升压单元，其升高第一电源的输出电压; 降压单元的输出电压的降压单元; 以及被驱动以通过降压单元的输出电压进行工作的负载。 升压单元将第一电源的输出电压升压到降压单元的工作电压的下限。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70 ...双极器件
H01L29/74 ....晶闸管型器件，如具有四区再生作用的
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