发明申请
US20110012208A1 FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/DRAIN INSULATION AND ASSOCIATED METHOD OF PRODUCTION
审中-公开
具有局部源/漏绝缘和相关生产方法的场效应晶体管
- 专利标题: FIELD-EFFECT TRANSISTOR WITH LOCAL SOURCE/DRAIN INSULATION AND ASSOCIATED METHOD OF PRODUCTION
- 专利标题(中): 具有局部源/漏绝缘和相关生产方法的场效应晶体管
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申请号: US12888938申请日: 2010-09-23
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公开(公告)号: US20110012208A1公开(公告)日: 2011-01-20
- 发明人: Jüergen Holz , Klaus Schrüfer , Helmut Tews
- 申请人: Jüergen Holz , Klaus Schrüfer , Helmut Tews
- 申请人地址: DE Muenchen
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Muenchen
- 优先权: DEDE10246718.8 20021007
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.