发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US12891214申请日: 2010-09-27
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公开(公告)号: US20110012231A1公开(公告)日: 2011-01-20
- 发明人: Hiroyuki AMISHIRO , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人: Hiroyuki AMISHIRO , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 优先权: JP2001-059948 20010305
- 主分类号: H01L29/8605
- IPC分类号: H01L29/8605
摘要:
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
公开/授权文献
- US08089136B2 Semiconductor device 公开/授权日:2012-01-03