发明申请
- 专利标题: Failure Detection Method and Failure Detection Apparatus
- 专利标题(中): 故障检测方法及故障检测装置
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申请号: US12836093申请日: 2010-07-14
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公开(公告)号: US20110012613A1公开(公告)日: 2011-01-20
- 发明人: Bin Gong , Qiang Guo
- 申请人: Bin Gong , Qiang Guo
- 申请人地址: CN Shanghai
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址: CN Shanghai
- 优先权: CN200910054951.6 20090716
- 主分类号: G01R31/02
- IPC分类号: G01R31/02
摘要:
The present invention discloses a failure detection method and a failure detection apparatus for detecting a defect in an electrical conductor. The failure detection method includes: providing at least two output terminals on the electrical conductor under test, the at least two output terminals having identical electric potentials; inputting a constant detection current sequentially to detection points arranged on the electrical conductor under test along a predetermined path; detecting an output current at one or more output terminals of the at least two output terminals; building a correspondence relationship between the detected one or more output currents at the one or more output terminals and positions of the detection points, based on information of the positions of the detection points and information of the detected one or more output currents at the one or more output terminals; and determining from the correspondence relationship whether the detection points have a defect. The failure detection method according to the invention can precisely locate defects; and uses a charged particle beam as the detection current source to avoid the size limitation of irradiation points, thereby satisfying the requirement for failure analysis in a small size.
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