发明申请
- 专利标题: SOLAR CELL AND FABRICATION METHOD THEREOF
- 专利标题(中): 太阳能电池及其制造方法
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申请号: US12740327申请日: 2008-07-11
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公开(公告)号: US20110017258A1公开(公告)日: 2011-01-27
- 发明人: Il-Hyoung Jung , Ju-Hwan Yun , Jong-Hwan Kim
- 申请人: Il-Hyoung Jung , Ju-Hwan Yun , Jong-Hwan Kim
- 申请人地址: KR Seoul
- 专利权人: LG Electronics Inc.
- 当前专利权人: LG Electronics Inc.
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2008-0001764 20080107
- 国际申请: PCT/KR08/04116 WO 20080711
- 主分类号: H01L31/042
- IPC分类号: H01L31/042 ; H01L21/00
摘要:
A back contact solar cell comprises a first dopant diffusion part and a second dopant diffusion part formed on a rear surface of an n-type semiconductor wafer with a predetermined distance formed therebetween by a diffusion prevention part for ensuring no contact with each other and suppressing the diffusion of dopant; and an electrode configured of an anode and a cathode each connected to the first dopant diffusion part and the second dopant diffusion part. According to the present invention, the back contact solar cell is capable of preventing light loss and improving its efficiency by forming an electrode to be positioned on a rear surface of a semiconductor wafer through a simple process and by simultaneously implementing an anode electrode and a cathode electrode on the semiconductor wafer without having a grid electrode restricting incidence of sunlight.
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