发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12891842申请日： 2010-09-28
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公开(公告)号： US20110018028A1公开(公告)日： 2011-01-27
- 发明人: Kazunari HATADE
- 申请人： Kazunari HATADE
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-367544 20051221; JP2006-098740 20060331
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A horizontal semiconductor device having multiple unit semiconductor elements, each of said unit semiconductor element formed by an IGBT including: a semiconductor substrate of a first conductivity type; a semiconductor region of a second conductivity type formed on the semiconductor substrate; a collector layer of the first conductivity type formed within the semiconductor region; a ring-shaped base layer of the first conductivity type formed within the semiconductor region such that the base layer is off said collector layer but surrounds said collector layer; and a ring-shaped first emitter layer of the second conductivity type formed in said base layer, wherein movement of carriers between the first emitter layer and the collector layer is controlled in a channel region formed in the base layer, and the unit semiconductor elements are disposed adjacent to each other.
公开/授权文献
- US08421157B2 Semiconductor device 公开/授权日：2013-04-16
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