TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER

发明申请

US20110018031A1 TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER 有权

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专利标题： TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER
申请号： US12893983

申请日： 2010-09-29
公开(公告)号： US20110018031A1

公开(公告)日： 2011-01-27
发明人: Anand Murthy , Boyan Boyanov , Suman Datta , Brian S. Doyle , Been-Yih Jin , Shaofeng Yu , Robert Chau
申请人： Anand Murthy , Boyan Boyanov , Suman Datta , Brian S. Doyle , Been-Yih Jin , Shaofeng Yu , Robert Chau
主分类号： H01L29/78
IPC分类号： H01L29/78

TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER

摘要：

Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.

公开/授权文献

US07968957B2 Transistor gate electrode having conductor material layer 公开/授权日：2011-06-28

信息查询

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的