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发明申请
US20110018114A1 Semiconductor Device and Method of Embedding Thermally Conductive Layer in Interconnect Structure for Heat Dissipation 有权
用于散热的互连结构中的导热层的半导体器件和方法

Semiconductor Device and Method of Embedding Thermally Conductive Layer in Interconnect Structure for Heat Dissipation
摘要：
A semiconductor device is made by forming a first thermally conductive layer over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.
摘要（中）：

通过在半导体管芯的第一表面上形成第一导热层来制造半导体器件。 半导体管芯的第二表面安装到牺牲载体上。 密封剂沉积在第一导热层和牺牲载体上。 将密封剂平坦化以暴露第一导热层。 第一绝缘层形成在半导体管芯的第二表面和密封剂的第一表面上。 半导体管芯的第二表面上的第一绝缘层的一部分被去除。 在第一绝缘层的去除部分内的半导体管芯的第二表面上形成第二导热层。 在第二导热层周围的绝缘层内形成导电层。 散热器可以安装在第一导热层上。

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