发明申请
US20110024759A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF
审中-公开
薄膜晶体管基板及形成金属线的方法
- 专利标题： THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FORMING METAL WIRE THEREOF
- 专利标题（中）： 薄膜晶体管基板及形成金属线的方法
-
申请号： US12901324申请日： 2010-10-08
-
公开(公告)号： US20110024759A1公开(公告)日： 2011-02-03
- 发明人: Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
- 申请人： Jae-Gab LEE , Chang-Oh Jeong , Myung-Mo Sung , Hee-Jung Yang , Beom-Seok Cho
- 优先权： KR10-2003-0000757 20030107
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/768
摘要：
The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
信息查询
IPC分类:
