发明申请
- 专利标题: METHOD OF FORMING ELECTRICAL CONNECTIONS
- 专利标题(中): 形成电气连接的方法
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申请号: US12768025申请日: 2010-04-27
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公开(公告)号: US20110027944A1公开(公告)日: 2011-02-03
- 发明人: Chung-Shi LIU , Shin-Puu JENG , Mirng-Ji LII , Chen-Hua YU
- 申请人: Chung-Shi LIU , Shin-Puu JENG , Mirng-Ji LII , Chen-Hua YU
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MAUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MAUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/56
摘要:
A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material.
公开/授权文献
- US08377816B2 Method of forming electrical connections 公开/授权日:2013-02-19
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