发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US12819874申请日： 2010-06-21
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公开(公告)号： US20110031466A1公开(公告)日： 2011-02-10
- 发明人: Yoshihisa KAGAWA , Tetsuya MIZUGUCHI , Ichiro FUJIWARA , Akira KOUCHIYAMA , Satoshi SASAKI , Naomi YAMADA
- 申请人： Yoshihisa KAGAWA , Tetsuya MIZUGUCHI , Ichiro FUJIWARA , Akira KOUCHIYAMA , Satoshi SASAKI , Naomi YAMADA
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-182036 20090805
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L21/77 ; H01L21/06
摘要：
Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array.
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