发明申请
- 专利标题： Multi-Level Memory Device Using Resistance Material
- 专利标题（中）： 使用电阻材料的多级存储器件
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申请号： US12819498申请日： 2010-06-21
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公开(公告)号： US20110032752A1公开(公告)日： 2011-02-10
- 发明人: Ik-Soo Kim , Do-Hyung KIM , Sung-Lae CHO , Hyeong-Geun AN , Dong-Hyun IM , Eun-Hee CHO
- 申请人： Ik-Soo Kim , Do-Hyung KIM , Sung-Lae CHO , Hyeong-Geun AN , Dong-Hyun IM , Eun-Hee CHO
- 优先权： KR10-2009-0073351 20090810
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/00
摘要：
A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.
公开/授权文献
- US08644062B2 Multi-level memory device using resistance material 公开/授权日：2014-02-04
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