发明申请
- 专利标题： PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION
- 专利标题（中）： 图案形成工艺，化学稳定性电阻组合物和电阻修饰组合物
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申请号： US12850266申请日： 2010-08-04
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公开(公告)号： US20110033799A1公开(公告)日： 2011-02-10
- 发明人: Takeru Watanabe , Tsunehiro Nishi , Masashi Iio
- 申请人： Takeru Watanabe , Tsunehiro Nishi , Masashi Iio
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-182136 20090805
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; C08F24/00 ; C08F20/04 ; C08F20/10 ; G03F7/004
摘要：
A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.
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