发明申请
US20110034336A1 CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS
审中-公开
在REBCO膜中掺入纳米Ba2（Y，RE）NbO6的临界电流密度增强
- 专利标题： CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS
- 专利标题（中）： 在REBCO膜中掺入纳米Ba2（Y，RE）NbO6的临界电流密度增强
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申请号： US12850398申请日： 2010-08-04
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公开(公告)号： US20110034336A1公开(公告)日： 2011-02-10
- 发明人: Amit Goyal , Sung-Hun Wee , Eliot Specht , Claudia Cantoni
- 申请人： Amit Goyal , Sung-Hun Wee , Eliot Specht , Claudia Cantoni
- 主分类号： H01L39/12
- IPC分类号： H01L39/12 ; H01L39/24 ; B32B7/00 ; B05D5/12 ; C23C14/34 ; C23C14/00 ; H01L41/187
摘要：
A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RENbO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RENbO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RENbO6 defects are also disclosed.