发明申请
- 专利标题： SR-TI-O-BASED FILM FORMING METHOD AND STORAGE MEDIUM
- 专利标题（中）： 基于SR-TI-O的膜形成方法和储存介质
-
申请号： US12918165申请日： 2009-02-18
-
公开(公告)号： US20110036288A1公开(公告)日： 2011-02-17
- 发明人: Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
- 申请人： Yumiko Kawano , Susumu Arima , Akinobu Kakimoto , Toshiyuki Hirota , Takakazu Kiyomura
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED,ELPIDA MEMORY, INC.
- 当前专利权人： TOKYO ELECTRON LIMITED,ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2008-037564 20080219
- 国际申请： PCT/JP2009/052728 WO 20090218
- 主分类号： C30B1/02
- IPC分类号： C30B1/02
摘要：
Disclosed is a method for Sr—Ti—O-base film formation. The method comprises placing a substrate with a Ru film formed thereon in a treatment vessel, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a first Sr—Ti—O-base film having a thickness of not more than 10 nm on the Ru film, annealing the first Sr—Ti—O-base film for crystallization, introducing a gaseous Ti material, a gaseous Sr material, and a gaseous oxidizing agent into the treatment vessel to form a second Sr—Ti—O-base film on the first Sr—Ti—O-base film, and annealing the second Sr—Ti—O-base film for crystallization.