发明申请
- 专利标题： Shielded gate trench MOSFET device and fabrication
- 专利标题（中）： 屏蔽栅沟槽MOSFET器件和制造
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申请号： US12583191申请日： 2009-08-14
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公开(公告)号： US20110037120A1公开(公告)日： 2011-02-17
- 发明人: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人： John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 专利权人： Alpha & Omega Semiconductor, Inc.
- 当前专利权人： Alpha & Omega Semiconductor, Inc.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device embodiment includes a substrate, an active gate trench in the substrate, and an asymmetric trench in the substrate. The asymmetric trench has a first trench wall and a second trench wall, the first trench wall is lined with oxide having a first thickness, and the second trench wall is lined with oxide having a second thickness that is different from the first thickness. Another semiconductor device embodiment includes a substrate, an active gate trench in the substrate; and a source polysilicon pickup trench in the substrate. The source polysilicon pickup trench includes a polysilicon electrode, and top surface of the polysilicon electrode is below a bottom of a body region. Another semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
公开/授权文献
- US08193580B2 Shielded gate trench MOSFET device and fabrication 公开/授权日：2012-06-05
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