发明申请
- 专利标题： Shielded gate trench MOSFET device and fabrication
- 专利标题（中）： 屏蔽栅沟槽MOSFET器件和制造
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申请号： US12583192申请日： 2009-08-14
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公开(公告)号： US20110039383A1公开(公告)日： 2011-02-17
- 发明人: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 申请人： John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- 专利权人： Alpha & Omega Semiconductor, Inc.
- 当前专利权人： Alpha & Omega Semiconductor, Inc.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A method for fabricating a semiconductor device includes forming a plurality of trenches, including applying a first mask, forming a first polysilicon region in at least some of the plurality of trenches, forming a inter-polysilicon dielectric region and a termination protection region, including applying a second mask, forming a second polysilicon region in the at least some of the plurality of trenches, forming a first electrical contact to the first polysilicon region and forming a second electrical contact to the second polysilicon region, including applying a third mask, disposing a metal layer, and forming a source metal region and a gate metal region, including applying a fourth mask.
公开/授权文献
- US08236651B2 Shielded gate trench MOSFET device and fabrication 公开/授权日：2012-08-07
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