发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12838451申请日： 2010-07-17
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公开(公告)号： US20110042667A1公开(公告)日： 2011-02-24
- 发明人: Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
- 申请人： Tetsufumi KAWAMURA , Hiroyuki Uchiyama , Hironori Wakana , Mutsuko Hatano , Takeshi Sato
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 优先权： JP2009-191589 20090821
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/34
摘要：
A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.
公开/授权文献
- US08314032B2 Semiconductor device and method for manufacturing the same 公开/授权日：2012-11-20