发明申请
- 专利标题： MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM
- 专利标题（中）： 化学气相沉积材料，含硅绝缘膜及含硅绝缘膜的生产方法
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申请号： US12934806申请日： 2009-03-24
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公开(公告)号： US20110042789A1公开(公告)日： 2011-02-24
- 发明人: Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
- 申请人： Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008079734 20080326; JP2008124327 20080512; JP2008225735 20080903; JP2008225736 20080903; JP2008233115 20080911
- 国际申请： PCT/JP2009/055825 WO 20090324
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L23/28 ; C07F7/08
摘要：
A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.
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