Invention Application
US20110042802A1 Semiconductor device, external connection terminal, method of manufacturing semiconductor device, and method of manufacturing external connection terminal
审中-公开
半导体装置，外部连接端子，半导体装置的制造方法以及制造外部连接端子的方法
- Patent Title: Semiconductor device, external connection terminal, method of manufacturing semiconductor device, and method of manufacturing external connection terminal
- Patent Title (中): 半导体装置，外部连接端子，半导体装置的制造方法以及制造外部连接端子的方法
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Application No.: US12805203Application Date: 2010-07-19
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Publication No.: US20110042802A1Publication Date: 2011-02-24
- Inventor: Fumiyoshi Kawashiro
- Applicant: Fumiyoshi Kawashiro
- Applicant Address: JP Kawasaki-shi
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Priority: JP2009-191489 20090820
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/44
Abstract:
A semiconductor device includes an electrode pad and an external connection terminal. The external connection terminal contains Sn equal to or more than 50 wt %, Sn and Pb equal to or more than 90 wt % in total, or Pb equal to or more than 85 wt %, and the surface thereof is coated with an Au layer. The thickness of the Au layer is preferably equal to or more than 10 nm and equal to or less than 1 μm. The weight of the Au layer is preferably equal to or less than 0.6% of the weight of the external connection terminal.
Information query
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