发明申请
- 专利标题： CMOS IMAGE SENSOR AND IMAGE SIGNAL DETECTING METHOD
- 专利标题（中）： CMOS图像传感器和图像信号检测方法
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申请号： US12828478申请日： 2010-07-01
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公开(公告)号： US20110043676A1公开(公告)日： 2011-02-24
- 发明人: Seung hyun LIM , Jeong hwan LEE , Kun hee CHO , Gun Hee HAN , Kwi Sung YOO , Seog heon HAM
- 申请人： Seung hyun LIM , Jeong hwan LEE , Kun hee CHO , Gun Hee HAN , Kwi Sung YOO , Seog heon HAM
- 申请人地址： KR Suwon-si KR Seoul
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人地址： KR Suwon-si KR Seoul
- 优先权： KR10-2009-0078192 20090824
- 主分类号： H04N5/335
- IPC分类号： H04N5/335
摘要：
A CMOS image sensor includes a photodiode, a switch configured to transfer a signal sensed by the photodiode to a sensing node, and a comparator electrically and directly connected to the sensing node and configured to compare the sensed signal of the sensing node and a ramp signal. Reset offset of the comparator is maintained at a constant offset voltage level during an initialization mode.
公开/授权文献
- US08432471B2 CMOS image sensor and image signal detecting method 公开/授权日：2013-04-30
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