发明申请
US20110044108A1 FLASH MEMORY DEVICE AND PROGRAM METHOD OF FLASH MEMORY DEVICE USING DIFFERENT VOLTAGES
有权
使用不同电压的闪存存储器件的闪速存储器件和程序方法
- 专利标题： FLASH MEMORY DEVICE AND PROGRAM METHOD OF FLASH MEMORY DEVICE USING DIFFERENT VOLTAGES
- 专利标题（中）： 使用不同电压的闪存存储器件的闪速存储器件和程序方法
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申请号： US12939251申请日： 2010-11-04
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公开(公告)号： US20110044108A1公开(公告)日： 2011-02-24
- 发明人: Dae-Seok Byeon , Young-Ho Lim
- 申请人： Dae-Seok Byeon , Young-Ho Lim
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2006-72189 20060731
- 主分类号： G11C16/12
- IPC分类号： G11C16/12 ; G11C16/04
摘要：
A flash memory and a program method of the flash memory include applying a pass voltage to word lines to boost a channel voltage, which is discharged to a ground voltage. A program voltage is applied to a selected word line and a local voltage is applied to at least one word line supplied with the pass voltage while the program voltage is being applied to the selected word line. The local voltage is lower than the pass voltage and equal to or higher than the ground voltage. The boosted channel voltage may be discharged before the program voltage is applied to the selected word line.