发明申请
US20110049591A1 SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE
有权
固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜
- 专利标题： SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE
- 专利标题（中）： 固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜
-
申请号： US12870321申请日： 2010-08-27
-
公开(公告)号： US20110049591A1公开(公告)日： 2011-03-03
- 发明人: Toshihiro NAKATANI , Takashi GOTO , Yoshiki MAEHARA , Hideyuki SUZUKI
- 申请人： Toshihiro NAKATANI , Takashi GOTO , Yoshiki MAEHARA , Hideyuki SUZUKI
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM CORPORATION
- 当前专利权人： FUJIFILM CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2009-199046 20090828; JPP2010-150591 20100630
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L31/18
摘要：
A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
公开/授权文献
信息查询
IPC分类:
