发明申请
- 专利标题: HIGH FREQUENCY DEVICE
- 专利标题(中): 高频器件
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申请号: US12860140申请日: 2010-08-20
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公开(公告)号: US20110050368A1公开(公告)日: 2011-03-03
- 发明人: Shun Mitarai , Minehiro Tonosaki , Koichi Ikeda
- 申请人: Shun Mitarai , Minehiro Tonosaki , Koichi Ikeda
- 申请人地址: JP Tokyo
- 专利权人: SONY CORPORATION
- 当前专利权人: SONY CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-197153 20090827
- 主分类号: H01P3/08
- IPC分类号: H01P3/08 ; H01F5/00
摘要:
A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.
公开/授权文献
- US08432316B2 High frequency device 公开/授权日:2013-04-30
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