发明申请
- 专利标题： LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES
- 专利标题（中）： 用于MEMS器件中控制粘合的低温非晶硅绝缘层
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申请号： US12939909申请日： 2010-11-04
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公开(公告)号： US20110051224A1公开(公告)日： 2011-03-03
- 发明人: James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
- 申请人： James Randolph Webster , Thanh Nghia Tu , Xiaoming Yan , Wonsuk Chung
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人： QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址： US CA San Diego
- 主分类号： G02B26/00
- IPC分类号： G02B26/00
摘要：
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.