发明申请
US20110053302A1 METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER
有权
使用激光提升技术制造发光二极管的方法和具有加热器的激光提升装置
- 专利标题: METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER
- 专利标题(中): 使用激光提升技术制造发光二极管的方法和具有加热器的激光提升装置
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申请号: US12693907申请日: 2010-01-26
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公开(公告)号: US20110053302A1公开(公告)日: 2011-03-03
- 发明人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
- 申请人: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
- 申请人地址: KR Ansan-si
- 专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人地址: KR Ansan-si
- 优先权: KR10-2009-0079430 20090826; KR10-2009-0079438 20090826
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; B23K26/00
摘要:
Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.