发明申请
- 专利标题： SEMICONDUCTOR CIRCUIT
- 专利标题（中）： 半导体电路
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申请号： US12874866申请日： 2010-09-02
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公开(公告)号： US20110053332A1公开(公告)日： 2011-03-03
- 发明人: Sang-Yun Lee
- 申请人： Sang-Yun Lee
- 优先权： KR10-2003-0040920 20030624; KR10-2003-0047515 20030712
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A semiconductor memory device includes a substrate and an interconnect region carried by the substrate. A donor layer is coupled to the interconnect region through a bonding interface. An electronic device is formed with the donor layer, wherein the electronic device is formed after the bonding interface is formed. A capacitor is connected to the electronic device so that the electronic device and capacitor operate as a dynamic random access memory device.
公开/授权文献
- US08071438B2 Semiconductor circuit 公开/授权日：2011-12-06
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