发明申请
- 专利标题： POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME
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申请号： US12947002申请日： 2010-11-16
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公开(公告)号： US20110057195A1公开(公告)日： 2011-03-10
- 发明人: Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
- 申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2005-0116887 20051202
- 主分类号： H01L33/16
- IPC分类号： H01L33/16 ; H01L29/786
摘要：
A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
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