发明申请
- 专利标题: GAS BARRIER COATING AND GAS BARRIER FILM
- 专利标题(中): 气体阻隔涂层和气体阻隔膜
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申请号: US12884468申请日: 2010-09-17
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公开(公告)号: US20110064932A1公开(公告)日: 2011-03-17
- 发明人: Toshiya TAKAHASHI , Takeshi SENGA , Kouji TONOHARA
- 申请人: Toshiya TAKAHASHI , Takeshi SENGA , Kouji TONOHARA
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-215785 20090917
- 主分类号: B32B27/06
- IPC分类号: B32B27/06 ; B32B33/00 ; C09K3/00
摘要:
Gas barrier coatings and gas barrier films are used in displays and so forth. Described gas barrier coatings are excellent not only in gas barrier properties but oxidation resistance, transparency and flexibility. A gas barrier coating is based on silicon nitride, and includes: a N/Si compositional ratio of 1 to 1.4; and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si—H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm−1 in a Fourier transform infrared absorption spectrum of the coating, with a ratio [I(Si—H)/I(Si—N)] between a peak intensity I(Si—H) of the absorption caused by Si—H stretching vibration and a peak intensity I(Si—H) of an absorption caused by Si—N stretching vibration in the vicinity of 840 cm−1 being 0.03 to 0.15.
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