发明申请
- 专利标题: Method For Making Semiconductor Device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12565454申请日: 2009-09-23
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公开(公告)号: US20110070725A1公开(公告)日: 2011-03-24
- 发明人: John Power , Danny Pak-Chum Shum
- 申请人: John Power , Danny Pak-Chum Shum
- 主分类号: H01L21/8239
- IPC分类号: H01L21/8239
摘要:
One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge storage layer; forming a conductive layer over the gate stack; etching the conductive layer to remove a portion of the conductive layer; and forming a select gate, the forming the select gate comprising etching a remaining portion of the conductive layer.
公开/授权文献
- US08101492B2 Method for making semiconductor device 公开/授权日:2012-01-24