发明申请
US20110073922A1 CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
审中-公开
接触形成方法，半导体器件制造方法和半导体器件
- 专利标题： CONTACT FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 接触形成方法，半导体器件制造方法和半导体器件
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申请号： US12992023申请日： 2009-04-17
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公开(公告)号： US20110073922A1公开(公告)日： 2011-03-31
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Hiroaki Tanaka , Tatsunori Isogai
- 申请人： Tadahiro Ohmi , Akinobu Teramoto , Hiroaki Tanaka , Tatsunori Isogai
- 优先权： JP2008-129692 20080516
- 国际申请： PCT/JP2009/057726 WO 20090417
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/425
摘要：
A semiconductor device manufacturing method includes the steps of ion-implanting a p-type or an n-type impurity into a Si layer portion to become a p-type or an n-type contact region of a semiconductor device, forming a metal film for a contact on a surface of the contact region without performing heat treatment for activating implanted ions after the ion-implanting step, and forming a silicide of a metal of the metal film by causing the metal to react with the Si layer portion by heating. It is desired to simultaneously perform the step of forming the silicide and the step of activating the implanted ions by heat treatment after the metal film is formed.
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