发明申请
US20110073956A1 FORMING SEMICONDUCTOR RESISTORS IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES BY INCREASING ETCH RESISTIVITY OF THE RESISTORS
有权
通过增加电阻器的电阻率，在包含金属栅的半导体器件中形成半导体电阻
- 专利标题： FORMING SEMICONDUCTOR RESISTORS IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES BY INCREASING ETCH RESISTIVITY OF THE RESISTORS
- 专利标题（中）： 通过增加电阻器的电阻率，在包含金属栅的半导体器件中形成半导体电阻
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申请号： US12886765申请日： 2010-09-21
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公开(公告)号： US20110073956A1公开(公告)日： 2011-03-31
- 发明人: Jens Heinrich , Ralf Richter , Katja Steffen , Johannes Groschopf , Frank Seliger , Andreas Ott , Manfred Heinz , Andy Wei
- 申请人： Jens Heinrich , Ralf Richter , Katja Steffen , Johannes Groschopf , Frank Seliger , Andreas Ott , Manfred Heinz , Andy Wei
- 优先权： DE102009043328.7 20090930
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/02 ; H01L21/336
摘要：
In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.