发明申请
- 专利标题： METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR GATE
- 专利标题（中）： 用于形成半导体栅的方法和装置
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申请号： US12568575申请日： 2009-09-28
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公开(公告)号： US20110073962A1公开(公告)日： 2011-03-31
- 发明人: Chen-Liang Chu , Fei-Yuh Chen , Chih-Wen Yao
- 申请人： Chen-Liang Chu , Fei-Yuh Chen , Chih-Wen Yao
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.
公开/授权文献
- US08513712B2 Method and apparatus for forming a semiconductor gate 公开/授权日：2013-08-20
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