发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- 专利标题（中）： 磁性元件和磁记忆
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申请号： US12879544申请日： 2010-09-10
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公开(公告)号： US20110073970A1公开(公告)日： 2011-03-31
- 发明人: Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
- 申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
- 优先权： JP2009-221569 20090925
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
公开/授权文献
- US08107281B2 Magnetoresistive element and magnetic memory 公开/授权日：2012-01-31
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