发明申请
- 专利标题： Crack Stop Trenches
- 专利标题（中）： 破裂停止沟槽
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申请号： US12963254申请日： 2010-12-08
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公开(公告)号： US20110074033A1公开(公告)日： 2011-03-31
- 发明人: Erdem Kaltalioglu , Hermann Wendt
- 申请人： Erdem Kaltalioglu , Hermann Wendt
- 主分类号： H01L23/532
- IPC分类号： H01L23/532
摘要：
Structures and methods of forming crack stop trenches are disclosed. The method includes forming active regions disposed in cell regions of a substrate, the cell regions separated by dicing channels, and forming back end of line (BEOL) layers over the substrate, the BEOL layers being formed over the cell regions and the dicing channels. Crack stop trenches are then formed encircling the cell regions by etching a portion of the BEOL layers surrounding the cell regions. The wafer is diced along the dicing channels.
公开/授权文献
- US08610238B2 Crack stop trenches 公开/授权日：2013-12-17
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