发明申请
- 专利标题: III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device
- 专利标题(中): III型氮化物半导体激光器件及其制造方法
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申请号: US12831566申请日: 2010-07-07
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公开(公告)号: US20110075694A1公开(公告)日: 2011-03-31
- 发明人: Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
- 申请人: Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Shinji TOKUYAMA , Takamichi SUMITOMO , Masaki UENO , Takatoshi IKEGAMI , Koji KATAYAMA , Takao NAKAMURA
- 申请人地址: JP Osaka-shi
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka-shi
- 优先权: JPP2009-228747 20090930
- 主分类号: H01S5/323
- IPC分类号: H01S5/323 ; H01L21/78
摘要:
In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the second dielectric multilayer film is smaller than a thickness of the first dielectric multilayer film.