发明申请
- 专利标题： Three Dimensional Multilayer Circuit
- 专利标题（中）： 三维多层电路
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申请号： US12567537申请日： 2009-09-25
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公开(公告)号： US20110076810A1公开(公告)日： 2011-03-31
- 发明人: Qiangfei Xia , Wei Wu
- 申请人： Qiangfei Xia , Wei Wu
- 申请人地址： US TX Houston
- 专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L21/77
- IPC分类号： H01L21/77
摘要：
A method for forming three-dimensional multilayer circuit includes forming an area distributed CMOS layer configured to selectively address a set of first vias and a set of second vias. A template is then aligned with the first set of vias and lower crossbar segments are created using the template. The template is then removed, rotated, and aligned with the set of second vias. Upper crossbar segments which attach to the second set of vias are then created.
公开/授权文献
- US08431474B2 Three dimensional multilayer circuit 公开/授权日：2013-04-30
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