发明申请
- 专利标题： METHOD FOR FABRICATING STRAINED-SILICON CMOS TRANSISTOR
- 专利标题（中）： 制备应变硅CMOS晶体管的方法
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申请号： US12959393申请日： 2010-12-03
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公开(公告)号： US20110076814A1公开(公告)日： 2011-03-31
- 发明人: Pei-Yu Chou , Shih-Fang Tzou , Jiunn-Hsiung Liao
- 申请人： Pei-Yu Chou , Shih-Fang Tzou , Jiunn-Hsiung Liao
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
First, a semiconductor substrate having a first active region and a second active region is provided. The first active region includes a first transistor and the second active region includes a second transistor. A first etching stop layer, a stress layer, and a second etching stop layer are disposed on the first transistor, the second transistor and the isolation structure. A first etching process is performed by using a patterned photoresist disposed on the first active region as a mask to remove the second etching stop layer and a portion of the stress layer from the second active region. The patterned photoresist is removed, and a second etching process is performed by using the second etching stop layer of the first active region as a mask to remove the remaining stress layer and a portion of the first etching stop layer from the second active region.
公开/授权文献
- US08828815B2 Method for fabricating strained-silicon CMOS transistor 公开/授权日：2014-09-09
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