Invention Application
US20110079846A1 HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOLTAGE DEVICES
有权
用于形成高电压装置的高压装置，系统和方法
- Patent Title: HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOLTAGE DEVICES
- Patent Title (中): 用于形成高电压装置的高压装置，系统和方法
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Application No.: US12792055Application Date: 2010-06-02
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Publication No.: US20110079846A1Publication Date: 2011-04-07
- Inventor: Chih-Wen YAO , Robert S. J. Pan , Ruey-Hsin LIU , Hsueh-Liang CHOU , Puo-Yu CHIANG , Chi-Chih CHEN , Hsiao Chin TUAN
- Applicant: Chih-Wen YAO , Robert S. J. Pan , Ruey-Hsin LIU , Hsueh-Liang CHOU , Puo-Yu CHIANG , Chi-Chih CHEN , Hsiao Chin TUAN
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.
Public/Granted literature
- US08507988B2 High voltage devices, systems, and methods for forming the high voltage devices Public/Granted day:2013-08-13
Information query
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