发明申请
- 专利标题： NON-VOLATILE MEMORY DEVICE
- 专利标题（中）： 非易失性存储器件
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申请号： US12713736申请日： 2010-02-26
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公开(公告)号： US20110084329A1公开(公告)日： 2011-04-14
- 发明人: Jang-hyun YOU , Jin-taek Park , Young-woo Park , Jung-dal Choi
- 申请人： Jang-hyun YOU , Jin-taek Park , Young-woo Park , Jung-dal Choi
- 优先权： KR10-2009-0096399 20091009
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A non-volatile memory device includes a semiconductor layer including a cell region and a peripheral region, a cell region gate structure disposed in the cell region of the semiconductor layer, and wherein the cell region gate structure includes a tunneling insulating layer and a first blocking insulating layer, a second blocking insulating layer, and a third blocking insulating layer. The non-volatile memory device further includes a peripheral region gate structure formed in the peripheral region of the semiconductor layer. The peripheral region gate structure includes a first peripheral region insulating layer including a same material as a material included in the tunneling insulating layer and a second peripheral region insulating layer including a same material as a material included in the third blocking insulating layer.
公开/授权文献
- US08169018B2 Non-volatile memory device 公开/授权日：2012-05-01
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