发明申请
- 专利标题： Reducing Device Mismatch by Adjusting Titanium Formation
- 专利标题（中）： 通过调整钛形成减少装置不匹配
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申请号： US12842753申请日： 2010-07-23
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公开(公告)号： US20110084391A1公开(公告)日： 2011-04-14
- 发明人: Shyh-Wei Cheng , Pin-Shyne Chin , Kuo-Chio Liu , Che-Jung Chu , Ming-Chang Hsieh , Hung-Lin Chen , Tian Sheng Lin
- 申请人： Shyh-Wei Cheng , Pin-Shyne Chin , Kuo-Chio Liu , Che-Jung Chu , Ming-Chang Hsieh , Hung-Lin Chen , Tian Sheng Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/532
- IPC分类号： H01L23/532
摘要：
An integrated circuit structure includes a semiconductor substrate; a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å; a first titanium nitride layer over and contacting the first titanium layer; and an aluminum-containing layer over and contacting the first titanium nitride layer.
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