Invention Application
US20110085387A1 SEMICONDUCTOR MEMORY APPARATUS WITH CLOCK AND DATA STROBE PHASE DETECTION
有权
具有时钟和数据结构相位检测的半导体存储器设备
- Patent Title: SEMICONDUCTOR MEMORY APPARATUS WITH CLOCK AND DATA STROBE PHASE DETECTION
- Patent Title (中): 具有时钟和数据结构相位检测的半导体存储器设备
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Application No.: US12970587Application Date: 2010-12-16
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Publication No.: US20110085387A1Publication Date: 2011-04-14
- Inventor: Sang Hee Lee
- Applicant: Sang Hee Lee
- Applicant Address: KR Ichon
- Assignee: HYNIX SEMICONDUCTOR, INC.
- Current Assignee: HYNIX SEMICONDUCTOR, INC.
- Current Assignee Address: KR Ichon
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10
Abstract:
A semiconductor memory apparatus includes an internal tuning unit configured to tune a generation timing of a data input strobe signal according to a phase difference between an external clock signal and a data strobe clock signal, and a data input sense amplifier configured to transmit data bits to a global line in response to the data input strobe signal.
Public/Granted literature
- US08824223B2 Semiconductor memory apparatus with clock and data strobe phase detection Public/Granted day:2014-09-02
Information query
