发明申请
- 专利标题： MEMORY USING TUNNELING FIELD EFFECT TRANSISTORS
- 专利标题（中）： 使用隧道场效应晶体管的存储器
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申请号： US12975997申请日： 2010-12-22
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公开(公告)号： US20110089392A1公开(公告)日： 2011-04-21
- 发明人: Thomas Nirschl
- 申请人： Thomas Nirschl
- 申请人地址： DE Munich
- 专利权人： QIMONDA AG
- 当前专利权人： QIMONDA AG
- 当前专利权人地址： DE Munich
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/8239
摘要：
A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to a second resistive memory element. The memory includes a first region coupled to the first source for providing a source node.
公开/授权文献
- US08389973B2 Memory using tunneling field effect transistors 公开/授权日：2013-03-05
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