发明申请
- 专利标题： Power Device with Improved Edge Termination
- 专利标题（中）： 具有改进的边缘终止的电源设备
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申请号： US12982051申请日： 2010-12-30
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公开(公告)号： US20110089488A1公开(公告)日： 2011-04-21
- 发明人: Hamza Yilmaz , Daniel Calafut
- 申请人： Hamza Yilmaz , Daniel Calafut
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/768
摘要：
A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region.
公开/授权文献
- US08063442B2 Power device with improved edge termination 公开/授权日：2011-11-22
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