发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US12913759申请日： 2010-10-27
-
公开(公告)号： US20110095348A1公开(公告)日： 2011-04-28
- 发明人: Hiraku CHAKIHARA , Yasushi Ishii
- 申请人： Hiraku CHAKIHARA , Yasushi Ishii
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 优先权： JPJP2009-248002 20091028; JPJP2010-69271 20100325; JPJP2010-203164 20100910
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/336 ; H01L27/088
摘要：
Technique of improving a manufacturing yield of a semiconductor device including a non-volatile memory cell in a split-gate structure is provided. A select gate electrode of a CG shunt portion is formed so that a second height d2 from the main surface of the semiconductor substrate of the select gate electrode of the CG shunt portion positioned in the feeding region is lower than a first height d1 of the select gate electrode from the main surface of the semiconductor substrate in a memory cell forming region.
公开/授权文献
- US08373216B2 Semiconductor device and method of manufacturing the same 公开/授权日：2013-02-12
信息查询
IPC分类:
