发明申请
- 专利标题： PILLAR BUMP WITH BARRIER LAYER
- 专利标题（中）： 具有障碍层的支柱
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申请号： US12940196申请日： 2010-11-05
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公开(公告)号： US20110101523A1公开(公告)日： 2011-05-05
- 发明人: Chien Ling HWANG , Yi-Wen WU , Chung-Shi LIU
- 申请人： Chien Ling HWANG , Yi-Wen WU , Chung-Shi LIU
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A copper pillar bump has a surface covered with by a barrier layer formed of a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof. The barrier layer depresses the copper diffusion and reaction with solder to reduce the thickness of intermetallic compound between the pillar pump and solder.
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