发明申请
- 专利标题: MECHANISMS FOR FORMING COPPER PILLAR BUMPS
- 专利标题(中): 形成铜支柱的机理
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申请号: US12846353申请日: 2010-07-29
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公开(公告)号: US20110101527A1公开(公告)日: 2011-05-05
- 发明人: Ming-Da CHENG , Wen-Hsiung LU , Chih-Wei LIN , Ching-Wen CHEN , Yi-Wen WU , Chia-Tung CHANG , Ming-Che HO , Chung-Shi LIU
- 申请人: Ming-Da CHENG , Wen-Hsiung LU , Chih-Wei LIN , Ching-Wen CHEN , Yi-Wen WU , Chia-Tung CHANG , Ming-Che HO , Chung-Shi LIU
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L21/60
摘要:
The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.
公开/授权文献
- US08659155B2 Mechanisms for forming copper pillar bumps 公开/授权日:2014-02-25