发明申请
- 专利标题: CREATION OF VIAS AND TRENCHES WITH DIFFERENT DEPTHS
- 专利标题(中): 创造不同深度的VIAS和TRENCHES
-
申请号: US12610624申请日: 2009-11-02
-
公开(公告)号: US20110101538A1公开(公告)日: 2011-05-05
- 发明人: Shom Ponoth , David V. Horak , Takeshi Nogami , Chih-Chao Yang
- 申请人: Shom Ponoth , David V. Horak , Takeshi Nogami , Chih-Chao Yang
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/768
摘要:
Embodiments of the invention provide a method of creating vias and trenches with different length. The method includes depositing a plurality of dielectric layers on top of a semiconductor structure with the plurality of dielectric layers being separated by at least one etch-stop layer; creating multiple openings from a top surface of the plurality of dielectric layers down into the plurality of dielectric layers by a non-selective etching process, wherein at least one of the multiple openings has a depth below the etch-step layer; and continuing etching the multiple openings by a selective etching process until one or more openings of the multiple openings that are above the etch-stop layer reach and expose the etch-stop layer. Semiconductor structures made thereby are also provided.
公开/授权文献
- US08227339B2 Creation of vias and trenches with different depths 公开/授权日:2012-07-24