发明申请
- 专利标题: MULTI-STAGE CMOS POWER AMPLIFIER
- 专利标题(中): 多级CMOS功率放大器
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申请号: US12823420申请日: 2010-06-25
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公开(公告)号: US20110102084A1公开(公告)日: 2011-05-05
- 发明人: Youn Suk Kim , Hyo Gun Bae , Joong Jin Nam , Jun Goo Won , Ki Joong Kim
- 申请人: Youn Suk Kim , Hyo Gun Bae , Joong Jin Nam , Jun Goo Won , Ki Joong Kim
- 申请人地址: KR Gyunggi-do
- 专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- 当前专利权人地址: KR Gyunggi-do
- 优先权: KR10-2009-0104992 20091102
- 主分类号: H03F3/45
- IPC分类号: H03F3/45
摘要:
There is provided a multi-stage CMOS power amplifier including: a driver amplifier having differential output terminals, inverting differential signals input through first and second input terminals and outputting the respective inverted signals through the differential output terminals; a transformer for power matching having a primary coil connected between the differential output terminals of the driver amplifier and a secondary coil coupled with the primary coil using electromagnetic induction, having a predetermined turns ratio to the primary coil, and connected to a direct current (DC) tuning voltage terminal; and a power amplifier power-amplifying differential signals passing through one end and the other end of the secondary coil of the transformer and outputting the respective power-amplified differential signals through first and second output terminals.
公开/授权文献
- US08022762B2 Multi-stage CMOS power amplifier 公开/授权日:2011-09-20
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