发明申请
- 专利标题： MULTILAYER STRUCTURE, CAPACITOR INCLUDING THE MULTILAYER STRUCTURE AND METHOD OF FORMING THE SAME
- 专利标题（中）： 多层结构，包括多层结构的电容器及其形成方法
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申请号： US12838296申请日： 2010-07-16
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公开(公告)号： US20110102968A1公开(公告)日： 2011-05-05
- 发明人: Jae-Hyoung CHOI , Youn-Soo Kim , Jung-Hyeon Kim , Wan-Don Kim , Jae-Soon Lim , Sang-Yeol Kang
- 申请人： Jae-Hyoung CHOI , Youn-Soo Kim , Jung-Hyeon Kim , Wan-Don Kim , Jae-Soon Lim , Sang-Yeol Kang
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2009-0065739 20090720
- 主分类号： H01G4/008
- IPC分类号： H01G4/008 ; B32B9/04 ; B05D5/12 ; C23C14/34
摘要：
In a multilayer structure and a method of forming the same, a conductive layer including a metal nitride and a dielectric layer positioned on a surface of the conductive layer and having a high dielectric constant. The metal nitride comprises one of niobium, vanadium and compositions thereof. Thus, the EOT and leakage current of the multilayer structure may be sufficiently improved.